IRFR3412 Overview
Units 48 190 A 1.3 V 68 100 ns 160 240 nC 4.5 6.8 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 29A, VGS = 0V TJ = 125°C, IF = 29A di/dt = 100A/µs D S .irf. 1 1/22/02 IRFR/U3412 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown...
IRFR3412 Key Features
- Motor Drive
- Bridge Converters
- All Zero Voltage Switching Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Enhanced Body Diode dv/dt Capability
- IRFR3412 IRFU3412 HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.025Ω ID 48A D-Pak IRFR3412 I-Pak IRFU3412