IRFR3518 Datasheet | International Rectifier

- 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET® Power MOSFET VDSS 80V RDS(on) max 29m W 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3518 I-Pak IRFU3518 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 80 ± 20 38 27 150 110 0.71 5.2 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)† Junction-to-Ambient Typ. - - - - - - - - - Max. 1.4 40 110 Units °C/W Notes  through † are on page 10 .irf. 09/23/02 IRFR3518/IRFU3518...