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IRFR3711ZCPBF - HEXFET Power MOSFET

Key Features

  • ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
  • dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elem.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 96050 IRFR3711ZCPbF IRFU3711ZCPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free HEXFET® Power MOSFET VDSS 20V RDS(on) max 5.7m: Qg 18nC Benefits Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR3711ZCPbF I-Pak IRFU3711ZCPbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.