IRFR430APBF Description
130 5.0 11 Units mJ A mJ Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. 1 03/02/07 IRFR/U430APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage...
IRFR430APBF Key Features
- Uninterruptible Power Supply
- High speed power switching
- Lead-Free
- IRFR430APbF IRFU430APbF RDS(on) max 1.7Ω HEXFET® Power MOSFET VDSS 500V ID 5.0A Benefits Low Gate Charge Q
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective COSS specified (See AN 1001)
- D-Pak IRFR430A I-Pak IRFU430A