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IRFR4510PbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate,.

Key Features

  • cle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 IRFR/U4510PbF VGS(th), Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 ID = 100μA ID = 250μA 2.0 ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 0 25 50 75 100.