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IRFR4615PBF - Power MOSFETs

Key Features

  • 40 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. 20 D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav 5 www. irf. com © 2013 In.

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Full PDF Text Transcription (Reference)

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFR4615PbF IRFU4615PbF HEXFET® Power MOSFET D VDSS 150V RDS(on) typ. 34m: max.