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IRFR4620PbF - Power MOSFETs

Key Features

  • re PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav www. irf. com 5 IRFR/U4620PbF VGS(th), Gate threshold Voltage (V) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 ID = 100µA ID = 250uA 2.5 ID = 1.0mA ID = 1.0A 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature IRRM (A) 90 80 IF = 10A VR = 100V 70 TJ = 25°C 60 TJ = 125°C 50 40 30 20 10 0 0 200 400 600 800 1000.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -96207A IRFR4620PbF IRFU4620PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D VDSS RDS(on) typ. max.