Datasheet4U Logo Datasheet4U.com

IRFR540Z - HEXFET Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax.

📥 Download Datasheet

Datasheet preview – IRFR540Z

📁 Similar Datasheet

  • IRFR540Z - N-Channel MOSFET (INCHANGE)
  • IRFR5410 - N-Channel MOSFET (INCHANGE)
  • IRFR5305 - P-Channel MOSFET (INCHANGE)
  • IRFR010 - Transistors (IRF)
  • IRFR010 - Power MOSFET (Vishay)
  • IRFR014 - Power MOSFET (Vishay)
  • IRFR014 - Power MOSFET (Fairchild Semiconductor)
  • IRFR014 - Power MOSFET (IRF)
  • IRFR014 - Power MOSFET (Vishay Siliconix)
  • IRFR014A - ADVANCED POWER MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
APPROVED PD - TBD AUTOMOTIVE MOSFET Features lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Published: |