IRFR812TRPBF
Features and Benefits
- Fast body diode eliminates the need for external diodes in ZVS applications.
- Lower Gate charge results in simpler drive requirements.
- Higher Gate voltage threshold offers improved noise immunity. Absolute Maximum Ratings
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 3.6 2.3 14.4 78 0.63 ± 20 32 -55 to + 150 300 (1.6mm from case ) 10lb in (1.1N m)
D-Pak IRFR812TRPb F
Units A W W/°C V V/ns °C
PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw e
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton x x
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse...
