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IRFR812TRPBF - Power MOSFET

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Features

  • Fast body diode eliminates the need for external diodes in ZVS.

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PD -97773 IRFR812TRPbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. 500V 1.85Ω 75ns D ID 3.6A Features and Benefits • Fast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Higher Gate voltage threshold offers improved noise immunity. Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 3.6 2.3 14.4 78 0.63 ± 20 32 -55 to + 150 300 (1.6mm from case ) 10lb in (1.
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