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IRFS31N20DPBF

IRFS31N20DPBF is Power MOSFET manufactured by International Rectifier.
IRFS31N20DPBF datasheet preview

IRFS31N20DPBF Datasheet

Part number IRFS31N20DPBF
Download IRFS31N20DPBF Datasheet (PDF)
File Size 299.79 KB
Manufacturer International Rectifier
Description Power MOSFET
IRFS31N20DPBF page 2 IRFS31N20DPBF page 3

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IRFS31N20DPBF Distributor

IRFS31N20DPBF Description

1 3/1/04 IRFB/S/SL31N20DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.25 V/°C RDS(on) Static Drain-to-Source On-Resistance 0.082 Ω VGS(th) Gate Threshold Voltage 3.0 5.5 V IDSS Drain-to-Source Leakage Current 25 µA 250 Gate-to-Source Forward Leakage 100 IGSS Gate-to-Source...

IRFS31N20DPBF Key Features

  • High Frequency DC-DC converters
  • Low Gate to Drain to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001)

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