Datasheet4U Logo Datasheet4U.com

IRFS3206PBF - Power MOSFET

Download the IRFS3206PBF datasheet PDF. This datasheet also covers the IRFB3206PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) 0.05 10 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFB3206PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 60V 2.4m: 3.