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IRFS3507 - (IRFx3507) HEXFET Power MOSFET

Download the IRFS3507 datasheet PDF (IRFB3507 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for (irfx3507) hexfet power mosfet.

Features

  • voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] E.

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Note: The manufacturer provides a single datasheet file (IRFB3507_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID 75V 7.0m: 8.
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