IRFS4010 Datasheet | International Rectifier

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free - 96186A IRFS4010Pb F IRFSL4010Pb F HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 100V 3.9m: 4.7m: 180A D2Pak IRFS4010Pb F TO-262 IRFSL4010Pb F G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage e Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics d EAS (Thermally limited) Single Pulse Avalanche Energy c IAR Avalanche Current f EAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC...