Download IRFS4020PbF Datasheet PDF
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IRFS4020PbF Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI.

IRFS4020PbF Key Features

  • Key parameters optimized for Class-D audio amplifier

IRFS4020PbF Applications

  • Low RDSON for improved efficiency
  • Low QG and QSW for better THD and improved
  • Low QRR for better THD and lower EMI
  • 175°C operating junction temperature for
  • Can deliver up to 300W per channel into 8Ω load in