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IRFS4020PbF - Digital Audio MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Key parameters optimized for Class-D audio amplifier.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI • 175°C operating junction temperature for ruggedness • Can deliver up to 300W per channel into 8Ω load in Key Parameters VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. 200 85 18 6.7 RG(int) typ. TJ max 3.2 175 D D D V mΩ nC nC Ω °C half-bridge configuration amplifier G DS G DS G S D2Pak IRFS4020PbF TO-262 IRFSL4020PbF GDS Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.