IRFS4020PbF Datasheet | International Rectifier

Features - Key parameters optimized for Class-D audio amplifier applications - Low RDSON for improved efficiency - Low QG and QSW for better THD and improved efficiency - Low QRR for better THD and lower EMI - 175°C operating junction temperature for ruggedness - Can deliver up to 300W per channel into 8Ω load in Key Parameters VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. 200 85 18 6.7 RG(int) typ. TJ max 3.2 175 V mΩ n C n C Ω °C half-bridge configuration amplifier DS G DS G D2Pak IRFS4020Pb F TO-262 IRFSL4020Pb F Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features bine to make this MOSFET a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current f Power Dissipation f Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Parameter f RθJC Junction-to-Case f RθJA Junction-to-Ambient (PCB Mount) Max. 200 ±20 18 13 52 100 52 0.70 -55 to +...