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IRFS4115PbF - Power MOSFET

Key Features

  • dif/dt www. irf. com 0 0 200 400 600 800 1000 diF /dt (A/μs) Fig. 17 - Typical Stored Charge vs. dif/dt 5 IRFS/SL4115PbF + ‚ -  RG D. U. T + Driver Gate Drive P. W. Period D= P. W. Period.
  • Circuit Layout Considerations.
  • Low Stray Inductance -.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer -.
  • + D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt.
  • dv/d.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 150V 10.3m: 12.