IRFS4710PbF Datasheet | International Rectifier

Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current PD- 95146 IRFB4710Pb F IRFS4710Pb F IRFSL4710Pb F HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.014Ω 75A TO-220AB IRFB4710 D2Pak IRFS4710 TO-262 IRFSL4710 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 75 53 300 3.8 200 1.4 ± 20 8.2 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units W/°C V V/ns °C Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Notes  through ‡ are on page 11 .irf. Typ. - - - 0.50 - - - - - -...