IRFS52N15DPBF
- 97002A
Applications l High frequency DC-DC converters l Plasma Display Panel
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free
IRFB52N15DPb F IRFS52N15DPb F IRFSL52N15DPb F
HEXFET® Power MOSFET
Key Parameters
VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max
150 200 32 175
V m:
°C
TO-220AB IRFB52N15DPb F
D2Pak
TO-262
IRFS52N15DPb F IRFSL52N15DPb F
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage
Peak Diode Recovery dv/dt
- Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3...
