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IRFS5615PbF - Digital Audio MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Key Parameters Optimized for Class-D Audio Amplifier.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIGITAL AUDIO MOSFET PD - 96204 IRFS5615PbF IRFSL5615PbF Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency • Low QRR for Better THD and Lower EMI • 175°C Operating Junction Temperature for Ruggedness • Can Deliver up to 300W per Channel into 4Ω Load in Half-Bridge Configuration Amplifier Key Parameters VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 150 34.5 26 11 2.7 175 DD D V m: nC nC Ω °C G S G S D G S D2Pak TO-262 IRFS5615PbF IRFSL5615PbF GDS Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.