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IRFS5620PbF - Digital Audio MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Key Parameters Optimized for Class-D Audio Amplifier.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96205 DIGITAL AUDIO MOSFET IRFS5620PbF Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency • Low QRR for Better THD and Lower EMI • 175°C Operating Junction Temperature for Ruggedness • Can Deliver up to 300W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier IRFSL5620PbF Key Parameters VDS RDS(ON) typ. @ 10V Qg typ. 200 63.7 25 Qsw typ. 9.8 RG(int) typ. TJ max 2.6 175 V m: nC nC Ω °C DD D G S G S D G D2Pak TO-262 S IRFS5620PbF IRFSL5620PbF GD S Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.