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IRFS7430-7PPbF - Power MOSFET

Key Features

  • 4.0 2.0 0.0 0 100 200 300 400 ID, Drain Current (A) 500 Fig 13. Typical On-Resistance vs. Drain Current 5 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014   IRFS7430-7PPbF Thermal Response ( ZthJC ) °C/W 1 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.001 0.0001 1E-006 1000 SINGLE PULSE (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Application  Brushed Motor drive applications  BLDC Motor drive applications PWM Inverterized topologies Battery powered circuits  Half-bridge and full-bridge topologies  Electronic ballast applications  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate StrongIRFET™ IRFS7430-7PPbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 40V 0.55m 0.