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IRFSL3107PbF - Power MOSFET

Download the IRFSL3107PbF datasheet PDF. This datasheet also covers the IRFS3107PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave).

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Note: The manufacturer provides a single datasheet file (IRFS3107PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 75V 2.5m: 3.