IRFSL3507 - (IRFx3507) HEXFET Power MOSFET

This page provides the datasheet information for the IRFSL3507, a member of the IRFB3507 (IRFx3507) HEXFET Power MOSFET family.

Product Overview

International Rectifier

Part number	IRFSL3507
Manufacturer	International Rectifier
File Size	439.39 KB
Description	(IRFx3507) HEXFET Power MOSFET
Datasheet	IRFSL3507 Datasheet
Additional preview pages of the IRFSL3507 datasheet.

voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
BV.
Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
BV.
Zth] E.

Other Datasheets by International Rectifier

Published: Mar 27, 2007 |