Datasheet Summary
- 97393
IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF
Features
- Key parameters optimized for Class-D audio amplifier applications
- Low RDSON for improved efficiency
- Low QG and QSW for better THD and improved efficiency
- Low QRR for better THD and lower EMI
- 175°C operating junction temperature for ruggedness
- Can deliver up to 300W per channel into 8Ω load in
Key Parameters
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ.
200 85 18 6.7
RG(int) typ. TJ max
3.2 175
V mΩ nC nC
Ω °C half-bridge configuration amplifier
DS G
DS G
D2Pak IRFS4020PbF
TO-262 IRFSL4020PbF
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D...
