IRFSL4510PbF - Power MOSFET

This page provides the datasheet information for the IRFSL4510PbF, a member of the IRFS4510PbF Power MOSFET family.

Product Overview

International Rectifier

Part number	IRFSL4510PbF
Manufacturer	International Rectifier
File Size	263.91 KB
Description	Power MOSFET
Datasheet	IRFSL4510PbF Datasheet
Additional preview pages of the IRFSL4510PbF datasheet.

lowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3.
BV.
Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
BV.
Zth] EAS (AR) = PD (ave).
tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 VGS(th), Gate threshold Voltage (V) IRFS/SL4510PbF 4.5 4.

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Published: Aug 19, 2015 |