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IRFSL4615PBF - N-Channel HEXFET Power MOSFET

Download the IRFSL4615PBF datasheet PDF. This datasheet also covers the IRFS4615PBF variant, as both devices belong to the same n-channel hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • wed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFS4615PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFSL4615 N-Channel MOSFET INCHANGE
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IRFSL4020PBF N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFSL4610PBF HEXFET Power MOSFET
IRFSL4620PBF N-Channel HEXFET Power MOSFET
IRFSL4010PbF Power MOSFET
IRFSL4020PbF Digital Audio MOSFET
IRFSL4115PbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID D 150V 34.