IRFSL4620PBF
PD -96203
IRFS4620Pb F IRFSL4620Pb F
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free
VDSS RDS(on) typ. max. ID
200V 63.7m: 77.5m: 24A
D2Pak IRFS4620Pb F
TO-262 IRFSL4620Pb F
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Max.
24 17 100 144 0.96 ± 20 54 -55 to + 175 300
Units
A W W/°C V V/ns
ID @ TC = 100°C IDM Pulsed Drain Current .. PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for...
