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IRFU1010ZPBF - AUTOMOTIVE MOSFET

Download the IRFU1010ZPBF datasheet PDF. This datasheet also covers the IRFR1010ZPBF variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l IRFR1010ZPbF IRFU1010ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 7.5mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR1010ZPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU1010Z N-Channel MOSFET INCHANGE
IRFU1018E N-Channel MOSFET INCHANGE
IRFU110 N-Channel Power MOSFETs Intersil Corporation
IRFU110 Power MOSFET Vishay Siliconix
IRFU110 N-Channel Power MOSFETs Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU1010Z AUTOMOTIVE MOSFET
IRFU1018EPbF Power MOSFET
IRFU110 Power MOSFET
IRFU120 POWER MOSFET
IRFU1205 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95951 AUTOMOTIVE MOSFET Features l l l l l l IRFR1010ZPbF IRFU1010ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 7.5mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.