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IRFU2307Z - AUTOMOTIVE MOSFET

Download the IRFU2307Z datasheet PDF. This datasheet also covers the IRFR2307Z variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR2307Z-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96910 AUTOMOTIVE MOSFET Features lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.