Datasheet Summary
- 96191B
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRFR2307ZPbF IRFU2307ZPbF
HEXFET® Power MOSFET
VDSS = 75V
G RDS(on) = 16mΩ S ID = 42A
D-Pak
I-Pak
IRFR2307Z...
