IRFU24N15D
- 94392
SMPS MOSFET
Applications High frequency DC-DC converters
IRFR24N15D IRFU24N15D
HEXFET® Power MOSFET l
VDSS
150V
RDS(on) max
95mΩ
24A
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
D-Pak IRFR24N15D
I-Pak IRFU24N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt
- Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
24 17 96 140 0.92 ± 30 4.9 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)- Junction-to-Ambient
Typ....
