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IRFU3411 - Power MOSFET

Download the IRFU3411 datasheet PDF. This datasheet also covers the IRFR3411 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR3411-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU3411 N-Channel MOSFET INCHANGE
IRFU3410 N-Channel MOSFET INCHANGE
IRFU310 Power MOSFET Vishay Siliconix
IRFU310 N-Channel MOSFET INCHANGE
IRFU310A Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU3411PBF HEXFET Power MOSFET
IRFU3410 Power MOSFET
IRFU3410PBF HEXFET Power MOSFET
IRFU3412 SMPS MOSFET
IRFU3412PBF SMPS MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications.