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IRFU3411 - Power MOSFET

This page provides the datasheet information for the IRFU3411, a member of the IRFR3411 Power MOSFET family.

Datasheet Summary

Description

achieve extremely low on-resistance per silicon area.

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Full PDF Text Transcription

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications.
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