IRFU3504PbF Datasheet | International Rectifier

Features l l l l l l IRFR3504Pb F IRFU3504Pb F HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 40V RDS(on) = 9.2mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ID = 30A D-Pak IRFR3504 I-Pak IRFU3504 Absolute Maximum Ratings Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100°C = 25°C = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value‡ Avalanche Current Repetitive Avalanche Energy† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 87 61 30 350 140 0.92 ± 20 240 480 See Fig.12a, 12b, 15, 16 -55 to + 175 Units VGS EAS EAS (tested) IAR EAR TJ TSTG W W/°C V m J A m J °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)ˆ Junction-to-Ambient Typ. - - - - - - - - - Max. 1.09 50 110 Units °C/W HEXFET(R) is a registered trademark of...