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IRFU3504ZPBF - AUTOMOTIVE MOSFET

Download the IRFU3504ZPBF datasheet PDF. This datasheet also covers the IRFR3504ZPBF variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 40V G S RDS(on) = 9.0mΩ ID = 42A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR3504ZPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU3504Z AUTOMOTIVE MOSFET
IRFU3504 AUTOMOTIVE MOSFET
IRFU3504PbF AUTOMOTIVE MOSFET
IRFU3505 AUTOMOTIVE MOSFET
IRFU3505PbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95521A AUTOMOTIVE MOSFET IRFR3504ZPbF IRFU3504ZPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 40V G S RDS(on) = 9.0mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .