Datasheet4U Logo Datasheet4U.com

IRFU3709Z - HEXFET Power MOSFET

This page provides the datasheet information for the IRFU3709Z, a member of the IRFR3709Z HEXFET Power MOSFET family.

Datasheet Summary

Features

  • × ig ig    + (Qg × Vg × f ) +  Qoss × Vin × f   2   f  This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage h.

📥 Download Datasheet

Datasheet preview – IRFU3709Z

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 94712 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET IRFR3709Z IRFU3709Z Qg 17nC 6.5m: VDSS RDS(on) max 30V D-Pak IRFR3709Z I-Pak IRFU3709Z Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 86 61 Units V A ™ f f 340 79 39 0.
Published: |