Datasheet Summary
- 95425B
IRFR4104PbF IRFU4104PbF
HEXFET® Power MOSFET
Features l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 40V RDS(on) = 5.5mΩ
ID = 42A
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
D-Pak...
