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IRFU4510PbF - Power MOSFET

Download the IRFU4510PbF datasheet PDF. This datasheet also covers the IRFR4510PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • cle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 IRFR/U4510PbF VGS(th), Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 ID = 100μA ID = 250μA 2.0 ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 0 25 50 75 100.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR4510PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU4510 N-Channel MOSFET INCHANGE
IRFU410 1.5A / 500V / 7.000 Ohm / N-Channel Power MOSFETs Intersil
IRFU410 N-Channel Power MOSFETs Intersil Corporation
IRFU4104 N-Channel MOSFET INCHANGE
IRFU4105 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU4104 Power MOSFET
IRFU4104PbF Power MOSFET
IRFU4105 Power MOSFET
IRFU4105PBF HEXFET Power MOSFET
IRFU4105Z Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97784 IRFR4510PbF IRFU4510PbF HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 11.1m max. 13.