IRFU48Z Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ÿl Lead-Free IRFU48ZPb F HEXFET® Power MOSFET VDSS = 55V RDS(on) = 11mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. ID = 42A D-Pak IRFR48ZPb F I-Pak IRFU48ZPb F Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 62 44 42 250 91 Units A Linear Derating Factor VGS d E AS (Thermally limited) h EAS (Tested ) Ù IAR g E A R Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and TSTG Storage Temperature Range 0.61 ± 20 74 110 See Fig.12a, 12b, 15, 16 -55 to + 175 W/°C V m J A m J °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal...