Datasheet4U Logo Datasheet4U.com

IRFU5505 - HEXFET Power MOSFET

This page provides the datasheet information for the IRFU5505, a member of the IRFR5505 HEXFET Power MOSFET family.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 ( .010) M A M B NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE.

📥 Download Datasheet

Datasheet preview – IRFU5505

📁 Similar Datasheet

  • IRFU5305 - P-Channel MOSFET (INCHANGE)
  • IRFU540Z - N-Channel MOSFET (INCHANGE)
  • IRFU5410 - N-Channel MOSFET (INCHANGE)
  • IRFU014 - N-Channel MOSFET (INCHANGE)
  • IRFU014 - Power MOSFET (Vishay Siliconix)
  • IRFU014A - ADVANCED POWER MOSFET (Fairchild Semiconductor)
  • IRFU020 - (IRFR020 / IRFU020) Power MOSFET (Vishay Siliconix)
  • IRFU024 - Power MOSFET (Vishay Siliconix)
  • IRFU024A - Power MOSFET (Samsung)
  • IRFU024N - N-Channel MOSFET (INCHANGE)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 9.1610B IRFR/U5505 HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.11Ω G S ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight www.DataSheet4U.
Published: |