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IRFV260 - TRANSISTOR N-CHANNEL

Features

  • n Hermetically Sealed n Electrically Isolated n Simple Drive Requirements n Ease of Paralleling n Ceramic Eyelets RDS(on) 0.060Ω ID 45A.
  • Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C Continuous Drain Current ID @ VGS = 10V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current  PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor IRFV260 45.
  • 29 180 300 2.4 Units A W W/K … VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage ±20 Single Pulse.

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Provisional Data Sheet No. PD-9.2002 HEXFET® TRANSISTOR IRFV260 N-CHANNEL 200Volt, 0.060Ω, HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves ver y low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required.
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