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IRFY340CM Datasheet Power MOSFET N-channel

Manufacturer: International Rectifier (now Infineon)

Overview: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1290B HEXFET® POWER MOSFET IRFY340CM N-CHANNEL 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance bined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Product Summary Part Number IRFY340CM BVDSS 400V RDS(on) 0.55Ω ID 8.

Key Features

  • n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling n Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy ‚ Avalance Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt.

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