Overview: Provisional Data Sheet No. PD 9.1295A www.DataSheet4U.com HEXFET® POWER MOSFET
-200 Volt, 0.51Ω HEXFET
International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET power MOSFETs also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET power MOSFET’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves ther mal efficiency and reduces drain capacitance. IRFY9240CM
P-CHANNEL Product Summary
Part Number IRFY9240CM BV DSS -200V R DS(on) 0.51Ω ID -9.
