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IRFY9240CM - P-CHANNEL POWER MOSFET

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  • n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter I D @ VGS= -10V, TC = 25°C I D @ VGS= -10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY9240CM Units A W W/K… V mJ A mJ V/ns °C g Continuous Drain Current -9.4 Continuous Drain Current -6.0 Pulsed Drain Current  -36 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy ‚ 700 Avalance C.

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Provisional Data Sheet No. PD 9.1295A www.DataSheet4U.com HEXFET® POWER MOSFET -200 Volt, 0.51Ω HEXFET International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET power MOSFETs also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
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