Datasheet Details
| Part number | IRFZ34EPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 1.81 MB |
| Description | Power MOSFET |
| Datasheet | IRFZ34EPBF_InternationalRectifier.pdf |
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Overview: l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling l Lead-Free.
| Part number | IRFZ34EPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 1.81 MB |
| Description | Power MOSFET |
| Datasheet | IRFZ34EPBF_InternationalRectifier.pdf |
|
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|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFZ34 | Power MOSFET | Fairchild Semiconductor |
 |
IRFZ34 | N-Channel Power MOSFET | Samsung Electronics |
 |
IRFZ34 | Power MOSFET | Vishay |
|
IRFZ34A | Power MOSFET | Fairchild Semiconductor |
|
IRFZ34A | Power MOSFET | Samsung Electronics |
| Part Number | Description |
|---|---|
| IRFZ34E | Power MOSFET |
| IRFZ34 | Power MOSFET |
| IRFZ34L | Power MOSFET |
| IRFZ34N | Power MOSFET |
| IRFZ34NL | Power MOSFET |
| IRFZ34NLPBF | Power MOSFET |
| IRFZ34NPBF | HEXFET Power MOSFET |
| IRFZ34NS | Power MOSFET |
| IRFZ34NSPBF | Power MOSFET |
| IRFZ34PbF | Power MOSFET |