IRFZ34VSPBF Overview
l HEXFET Power MOSFET D IRFZ34VSPbF IRFZ34VLPbF ® VDSS = 60V RDS(on) = 28mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and...
IRFZ34VSPBF Key Features
- Advanced Process Technology Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Optimized for SMPS Applications
