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IRFZ34VSPBF - (IRFZ34VLPBF / IRFZ34VSPBF) Power MOSFET

This page provides the datasheet information for the IRFZ34VSPBF, a member of the IRFZ34VLPBF (IRFZ34VLPBF / IRFZ34VSPBF) Power MOSFET family.

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • tion indicates "Lead-F ree" INT E RNAT IONAL RECT IF IE R LOGO ASS E MBLY LOT CODE PART NUMB ER F 530S DAT E CODE YEAR 0 = 2000 WE EK 02 LINE L OR INTE RNAT IONAL RECT IFIE R LOGO AS S EMBLY LOT CODE PART NUMBE R F530S DAT E CODE P = DES IGNATE S LEAD-F REE.

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Datasheet preview – IRFZ34VSPBF

Datasheet Details

Part number IRFZ34VSPBF
Manufacturer International Rectifier
File Size 240.81 KB
Description (IRFZ34VLPBF / IRFZ34VSPBF) Power MOSFET
Datasheet download datasheet IRFZ34VSPBF Datasheet
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Full PDF Text Transcription

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PD - 95560 l Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l HEXFET Power MOSFET D IRFZ34VSPbF IRFZ34VLPbF ® VDSS = 60V RDS(on) = 28mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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