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IRFZ44VSPbF - HEXFET Power MOSFET

Download the IRFZ44VSPbF datasheet PDF. This datasheet also covers the IRFZ44VLPbF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ44VLPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFZ44V N-Channel MOSFET INCHANGE
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IRFZ44VZS N-Channel MOSFET INCHANGE
IRFZ44 Power MOSFET Fairchild
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ44VS Power MOSFET
IRFZ44V Power MOSFET
IRFZ44VL Power MOSFET
IRFZ44VLPbF HEXFET Power MOSFET
IRFZ44VPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95561 l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free IRFZ44VSPbF IRFZ44VLPbF D HEXFET® Power MOSFET VDSS = 60V RDS(on) = 16.5mΩ G S ID = 55A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.