Datasheet Summary
- 94769
AUTOMOTIVE MOSFET
Features
O O O O O O
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
HEXFET® Power MOSFET
IRFZ46Z IRFZ46ZS IRFZ46ZL
VDSS = 55V
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use...
