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IRFZ46ZS - AUTOMOTIVE MOSFET

Download the IRFZ46ZS datasheet PDF. This datasheet also covers the IRFZ46Z variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D IRFZ46Z IRFZ46ZS IRFZ46ZL VDSS = 55V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ46Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ46ZS N-Channel MOSFET INCHANGE
IRFZ46Z N-Channel MOSFET INCHANGE
IRFZ46 HEXFET Power MOSFET ART CHIP
IRFZ46 Power MOSFET Vishay
IRFZ46N N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ46ZSPbF Power MOSFET
IRFZ46Z AUTOMOTIVE MOSFET
IRFZ46ZL AUTOMOTIVE MOSFET
IRFZ46ZLPbF Power MOSFET
IRFZ46ZPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94769 AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D IRFZ46Z IRFZ46ZS IRFZ46ZL VDSS = 55V Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. RDS(on) = 13.