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IRG4BC15MDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

  • Rugged: 10µsec short circuit capable at VGS = 15V.
  • Low VCE(on) for 4 to 10kHz.

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Full PDF Text Transcription

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PD- 95612 IRG4BC15MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes C Short Circuit Rated Fast IGBT VCES = 600V Benefits • Industry standard TO-220AB package • Lead-Free G E VCE(on) typ. = 1.88V @VGE = 15V, IC = 8.
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