IRG4BC15MDPBF Description
PD- 95612 IRG4BC15MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG4BC15MDPBF Key Features
- Rugged: 10µsec short circuit capable at VGS = 15V
- Low VCE(on) for 4 to 10kHz
IRG4BC15MDPBF Applications
- IGBT co-packaged with ultra-soft-recovery anti-parallel