IRG4MC30F
Key Features
- Electrically Isolated and Hermetically Sealed
- Simple Drive Requirements
- Latch-proof
- Fast Speed Operation 3 kHz - 8 kHz
- High Operating Frequency
- Switching-loss Rating includes all "tail" losses
- Ceramic Eyelets G E n-channel Benefits
- Generation 4 IGBT's offer highest efficiency available
- IGBT's optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. VCES = 600V VCE(on) max =1.7V @VGE = 15V, IC = 15A TO-254AA
