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INSULATED GATE BIPOLAR TRANSISTOR
PD-94313D
IRG4MC30F
Fast Speed IGBT
Features
C
• Electrically Isolated and Hermetically Sealed • Simple Drive Requirements • Latch-proof • Fast Speed Operation 3 kHz - 8 kHz • High Operating Frequency • Switching-loss Rating includes all "tail" losses • Ceramic Eyelets
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
IRG4MC30F Datasheet
