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IRG4MC30F Datasheet Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRG4MC30F fast speed igbt - insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4MC30F
Manufacturer	International Rectifier (now Infineon)
File Size	188.76 KB
Description	Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG4MC30F Download (PDF)

Overview

INSULATED GATE BIPOLAR TRANSISTOR PD-94313D IRG4MC30F Fast Speed.

Key Features

C.
Electrically Isolated and Hermetically Sealed.
Simple Drive Requirements.
Latch-proof.
Fast Speed Operation 3 kHz - 8 kHz.
High Operating Frequency.
Switching-loss Rating includes all "tail" losses.
Ceramic Eyelets G E n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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