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IRG4MC30F - Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4MC30F Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4MC30F

Datasheet Details

Part number	IRG4MC30F
Manufacturer	International Rectifier
File Size	188.76 KB
Description	Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4MC30F Datasheet
Additional preview pages of the IRG4MC30F datasheet.

Product details

Features

C.
Electrically Isolated and Hermetically Sealed.
Simple Drive Requirements.
Latch-proof.
Fast Speed Operation 3 kHz - 8 kHz.
High Operating Frequency.
Switching-loss Rating includes all "tail" losses.
Ceramic Eyelets G E n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: Jan 27, 2007 |