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IRG4PH40U Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 91612C IRG4PH40U INSULATED GATE BIPOLAR TRANSISTOR.

IRG4PH40U datasheet preview

Datasheet Details

Part number	IRG4PH40U
Manufacturer	International Rectifier (now Infineon)
File Size	163.94 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PH40U_InternationalRectifier.pdf

Key Features

UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode.
New IGBT design provides tighter parameter distribution and higher efficiency than previous generations.
Optimized for power conversion; SMPS, UPS and welding.
Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-channel Benefits.
Higher switching frequency capability th.

IRG4PH40UD2 from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	IRG4PH40UD2	Insulated Gate Bipolar Transistor	IRF
	IRG4PH40UD2-E	Insulated Gate Bipolar Transistor	IRF
	IRG4PH40UD2-EP	Insulated Gate Bipolar Transistor	IRF
	IRG4PH40UD2PBF	Insulated Gate Bipolar Transistor	IRF

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4PH40UD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH40UDPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH40UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH40K	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH40KD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH40KDPBF	INSUALATED GATE BIPOLAR TRANSISTOR
IRG4PH40KPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH40S	Standard Speed IGBT
IRG4PH20K	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH20KD	INSULATED GATE BIPOLAR TRANSISTOR

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