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IRG4PH40U - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode.
  • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations.
  • Optimized for power conversion; SMPS, UPS and welding.
  • Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-channel Benefits.
  • Higher switching frequency capability th.

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PD - 91612C IRG4PH40U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.