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IRG4ZH50KD - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • q High short circuit rating optimized for motor control, tsc = 10µs, VCC = 720V, TJ = 125°C, VGE = 15V n-channel C VCES = 1200V VCE(ON)typ = 2.79V q q q q q q q q q q IGBT co-packaged with.

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www.DataSheet4U.com PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features q High short circuit rating optimized for motor control, tsc = 10µs, VCC = 720V, TJ = 125°C, VGE = 15V n-channel C VCES = 1200V VCE(ON)typ = 2.79V q q q q q q q q q q IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Combines low conduction losses with high switching speed Low profile low inductance SMD-10 Package Separated control & Power-connections for easy paralleling Good coplanarity Easy solder inspection and cleaning Highest power density and efficiency available HEXFRED Diodes optimized for performance with IGBTs.
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