IRG6I320UPBF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
Key Features
- @ IC = 24A IRP max @ TC= 25°C TJ max 1.45 160 150 C V V A °C G E n-channel G Gate C Collector CE G TO-220AB Full-Pak E Emitter
